SiC Mosfets

Global Semiconductor A high voltage SiC MOSFET is a type of power electronics transistor that utilizes silicon carbide as its semiconductor material. These transistors are designed to handle high voltages and are used in various applications where high voltage and efficiency are critical. They offer several advantages over traditional silicon-based MOSFETs, including:

• Higher Voltage Capability: SiC MOSFETs can handle voltages up to 1.7kV and beyond, making them suitable for high-voltage applications. Lower Losses: They boast lower on-resistance and faster switching speeds, which translates to reduced conduction and switching losses, making them more efficient.
• High-Temperature Operation: SiC can handle higher temperatures (up to 200-300°C) compared to silicon, making them suitable for high-power and high-temperature environments.
• Enhanced Robustness and Reliability: SiC MOSFETs are more robust and reliable under extreme conditions compared to traditional silicon MOSFETs, contributing to longer lifespans.
• The unique properties of SiC, such as a wider bandgap and high thermal conductivity, make it an excellent choice for modern, high-performance semiconductor applications. SiC MOSFETs are increasingly adopted across various industries due to their superior performance characteristics and significant efficiency improvements over traditional silicon MOSFETs.
• OUR LIST OF SIC MOSFETS FROM QUEST SEMI