1700v 8amp SiC Mosfet Rds. on 0.8mΩ
AU$13.63
In stock: 2190 available
Product Details
Features: Operating Temperature 175°C -Low On-Resistance RDS (on) 0.8Ω -Fast Switching Speed and Low EMI -High Peak Current Ratings -Low Total Gate Charge 16nC for Low Switching Losses -Improved Power Density: The combination of high voltage, fast switching, and low losses. -Reduced System Size and Weight
Applications: SiC MOSFETs are well-suited for applications where high-power density, high-frequency operation, and improved efficiency are critical. Their characteristics make them a preferred choice in a variety of modern electronic systems. -Electric Vehicles -Solar Inverters -Uninterruptible Power Supplies (UPS) -Switched-Mode Power Supplies (SMPS) -Industrial Motor Drives -Renewable Energy Systems -High-Frequency Power Converters -Grid-Tied Energy Storage Systems
1700v 8amp SiC Mosfet Rds. on 0.8mΩ
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