SiC Schottky Diodes

A high voltage SiC Schottky diode is a type of power semiconductor device made from silicon carbide (SiC), which has a wider bandgap than traditional silicon diodes. This allows SiC Schottky diodes to handle higher voltages and operate at higher temperatures and frequencies, making them suitable for applications such as electric vehicle drives, power supplies, and renewable energy systems. Key advantages include:

• Higher breakdown voltage: SiC diodes can achieve breakdown voltages ranging from 600V to 1200V, compared to silicon diodes typically around 600V
• Lower forward voltage drops: This results in reduced power losses and increased efficiency.
• Higher thermal conductivity: SiC diodes maintain stable performance at higher temperatures, up to 200°C.
• Lower on-state resistance: This enhances switching speed and efficiency in high-frequency applications.
  The global market for SiC Schottky diodes is expected to grow significantly, driven by the increasing demand for high-power and high-efficiency semiconductor devices.
• OUR LIST OF HOMOGENEOUS SIC SCHOTTKY DIODES FROM QUEST SEMI